File:IvsV IGBT.png
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[edit]DescriptionIvsV IGBT.png | Static characteristic of a imaginary Insulated Gate Bipolar Transistor (IGBT) |
Date | |
Source | own work, loosely based on model in "Power semiconductor devices" by B. J. Baliga, ISBN 0-534-94098-6 |
Author | Cyril BUTTAY |
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[edit]Permission is granted to copy, distribute and/or modify this document under the terms of the GNU Free Documentation License, Version 1.2 or any later version published by the Free Software Foundation; with no Invariant Sections, no Front-Cover Texts, and no Back-Cover Texts. A copy of the license is included in the section entitled GNU Free Documentation License.http://www.gnu.org/copyleft/fdl.htmlGFDLGNU Free Documentation Licensetruetrue |
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-V{_{th}}=7 V' at 9.8,47 right
set label 4 '6 V' at 9.8,37.5 right set label 5 '5 V' at 9.8,26.5 right set label 6 '4 V' at 9.8,17.4 right set label 7 '3 V' at 9.8,10.5 right set label 8 '2 V' at 9.8,5.5 right set label 9 '1 V' at 9.8,2.5 right
- The model is basically that of a mosfet, with a diode in series
- Drain current in linear region
linear(vds,vgsvth)=2*vgsvth*vds-vds**2
- Drain current in saturation region
saturation(vds,vgsvth)=vgsvth**2
- Drain current
draincurrent(vds,vgsvth)=(vds>vgsvth?saturation(vds,vgsvth):linear(vds,vgsvth))
- limit between saturation and linear regions
limit(vds)=vds**2
- diode forward voltage:
Vf(t,vgsvth)=2*0.026*log(draincurrent(t,vgsvth)/10e-8)
set output "IvsV_IGBT.eps" set parametric set sample 2000
- this is totally non physical: we calculate the current in the drain of the mosfet,
- then use this value to calculate the voltage drop in the diode, and then plot Vf+voltage
- on the x-axis, and the current on the y-axis. Then, I divide the voltage across the MOSFET
- by an arbitrary factor (4) to get a steeper curve.
plot [0:40 ][0:10][0:50] Vf(t,1)+t/4,draincurrent(t,1) ls 1 title ,\
Vf(t,2)+t/4,draincurrent(t,2) ls 1 title ,\ Vf(t,3)+t/4,draincurrent(t,3) ls 1 title ,\
Vf(t,4)+t/4,draincurrent(t,4) ls 1 title ,\
Vf(t,5)+t/4,draincurrent(t,5) ls 1 title ,\ Vf(t,6)+t/4,draincurrent(t,6) ls 1 title ,\ Vf(t,7)+t/4,draincurrent(t,7) ls 1 title
}}
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current | 22:13, 28 June 2006 | 1,500 × 1,050 (30 KB) | CyrilB~commonswiki (talk | contribs) | {{Information |Description=Static characteristic of a imaginary Insulated Gate Bipolar Transistor (IGBT) |Source=own work, loosely based on model in "Power semiconductor devices" by B. J. Baliga, ISBN 0-534-94098-6 |Date=28/06/2006 |Author=Cyril BUTTAY |P |
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