File:Технология выращенного транзистора.PNG
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Технология производства транзисторов выращиванием из расплава - первая вообще технология производства плоскостных транзисторов (1950). Один монокристалл = одна пара pn-переходов = несколько десятков транзисторов. The first historical junction transistor technology (1950, Morgan Sparks): one crystal rod = one pair of junctions = a dozen or two of transistors. |
| Date | |
| Source | Own work по мотивам патента Спаркса / Bell Labs 1950 года |
| Author | user:Retired Electrician |
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This work is ineligible for copyright and therefore in the public domain because it consists entirely of information that is common property and contains no original authorship. |
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| current | 08:19, 25 March 2012 | | 1,009 × 740 (47 KB) | Retired electrician (talk | contribs) | {{Information |Description=Технология производства транзисторов выращиванием из расплава - первая вообще технология производства плоскостных транз... |
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